- Manufacturer：
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- Diodes Incorporated (16)
- Part Status：
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- Operating Temperature：
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- Power Dissipation (Max)：
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- FET Type：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id, Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Drive Voltage (Max Rds On, Min Rds On)：
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17 Records
| Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
Diodes Incorporated | MOSFET P-CH 30V 700M... |
1 |
3,872
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | MOSFET N-CH 20V 1.2A... |
1 |
3,771
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | MOSFET P-CH 20V 4.6A... |
1 |
4,476
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | MOSFET N-CH 30V 1.1A... |
1 |
2,934
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | MOSFET N-CH 12V 9.3A... |
1 |
4,617
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | MOSFET N-CH 30V 6A ... |
1 |
2,949
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | MOSFET P-CH 30V 3A ... |
1 |
2,248
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | MOSFET N-CH 12V 9.3A... |
1 |
4,880
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | MOSFET N-CH 20V 6.9A... |
1 |
3,346
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 30V 200M... |
1 |
2,281
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | MOSFET N-CH 30V 4.2A... |
1 |
2,464
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | MOSFET N-CH 30V 6A ... |
10,000 |
2,858
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | MOSFET P-CH 30V 4A ... |
3,000 |
2,587
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | MOSFET N-CH 20V 1.2A... |
3,000 |
3,294
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | MOSFET P-CH 30V 3A ... |
10,000 |
3,377
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | MOSFET P-CH 30V 3A ... |
3,000 |
4,831
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | MOSFET N-CH 30V 6A ... |
1 |
3,235
In-stock
|
Get Quote |