- Manufacturer：
-
- Vishay Siliconix (6)
- Operating Temperature：
-
- Power Dissipation (Max)：
-
- FET Type：
-
- Drain to Source Voltage (Vdss)：
-
- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id, Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
-
- Drive Voltage (Max Rds On, Min Rds On)：
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15 Records
| Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
Rochester Electronics | AUTOMOTIVE HEXFE... |
624 |
4,198
In-stock
|
Get Quote | ||
|
|
STMicroelectronics | MOSFET N-CHANNEL... |
1 |
3,219
In-stock
|
Get Quote | ||
|
|
STMicroelectronics | MOSFET N-CH 900V 6A... |
1 |
4,549
In-stock
|
Get Quote | ||
|
|
Rochester Electronics | HEXFET N-CHANNEL... |
930 |
4,463
In-stock
|
Get Quote | ||
|
|
Vishay Siliconix | MOSFET N-CH 620V 6A... |
1 |
3,766
In-stock
|
Get Quote | ||
|
|
Rochester Electronics | IRLU3915 - HEXFET P... |
653 |
2,416
In-stock
|
Get Quote | ||
|
|
Vishay Siliconix | MOSFET N-CH 800V 5.4... |
1 |
2,702
In-stock
|
Get Quote | ||
|
|
Rochester Electronics | HEXFET POWER MOS... |
643 |
2,212
In-stock
|
Get Quote | ||
|
|
Rochester Electronics | IRFU3707 - HEXFET N... |
521 |
4,550
In-stock
|
Get Quote | ||
|
|
Rochester Electronics | POWER FIELD-EFFE... |
377 |
3,093
In-stock
|
Get Quote | ||
|
|
Vishay Siliconix | MOSFET N-CH 650V 7A... |
3,000 |
4,732
In-stock
|
Get Quote | ||
|
|
Vishay Siliconix | MOSFET N-CHANNEL... |
3,000 |
3,452
In-stock
|
Get Quote | ||
|
|
Vishay Siliconix | MOSFET N-CH 800V 4.3... |
3,000 |
4,531
In-stock
|
Get Quote | ||
|
|
Vishay Siliconix | MOSFET N-CH 800V 4.3... |
3,000 |
3,185
In-stock
|
Get Quote | ||
|
|
STMicroelectronics | MOSFET N-CH 1050V 4A... |
1 |
3,370
In-stock
|
Get Quote |