- Manufacturer：
-
- Part Status：
-
- Power Dissipation (Max)：
-
- Drain to Source Voltage (Vdss)：
-
- Current - Continuous Drain (Id) @ 25°C：
-
- Rds On (Max) @ Id, Vgs：
-
- Vgs(th) (Max) @ Id：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
16 Records
| Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
Rochester Electronics | 9A, 600V, 0.18OHM, N-CH... |
214 |
2,070
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 650V 17.... |
1 |
4,808
In-stock
|
Get Quote | ||
|
|
Rochester Electronics | MOSFET N-CH 650V 22.... |
1 |
4,169
In-stock
|
Get Quote | ||
|
|
Rochester Electronics | MOSFET N-CH 600V 20.... |
127 |
3,962
In-stock
|
Get Quote | ||
|
|
Rochester Electronics | MOSFET N-CH 650V 11.... |
1 |
3,744
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 650V 6A... |
500 |
4,018
In-stock
|
Get Quote | ||
|
|
Rochester Electronics | MOSFET N-CH 650V 10.... |
350 |
3,337
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 650V 13.... |
500 |
4,583
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 650V 31.... |
500 |
4,487
In-stock
|
Get Quote | ||
|
|
Rochester Electronics | MOSFET N-CH 650V 8.7... |
326 |
4,399
In-stock
|
Get Quote | ||
|
|
Rochester Electronics | MOSFET N-CH 650V 20.... |
34 |
4,860
In-stock
|
Get Quote | ||
|
|
Rochester Electronics | POWER FIELD-EFFE... |
172 |
4,802
In-stock
|
Get Quote | ||
|
|
Rochester Electronics | MOSFET N-CH 650V 38A... |
101 |
2,054
In-stock
|
Get Quote | ||
|
|
Rochester Electronics | MOSFET N-CH 650V 20.... |
1 |
4,380
In-stock
|
Get Quote | ||
|
|
Rochester Electronics | MOSFET N-CH 650V 7.3... |
501 |
2,277
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 560V 16A... |
1 |
2,735
In-stock
|
Get Quote |