Power Dissipation (Max):
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Vgs (Max):
Image Part Manufacturer Description MOQ Stock Action
2SK2847(F) Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 900V 8A...
1
RFQ
2,018
In-stock
Get Quote
2SK2916(F) Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 500V 14A...
1
RFQ
2,637
In-stock
Get Quote
2SK2917(F) Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 500V 18A...
1
RFQ
3,020
In-stock
Get Quote
2SK2995(F) Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 250V 30A...
1
RFQ
4,294
In-stock
Get Quote
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