Power Dissipation (Max):
Current - Continuous Drain (Id) @ 25°C:
Rds On (Max) @ Id, Vgs:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Drive Voltage (Max Rds On, Min Rds On):
Image Part Manufacturer Description MOQ Stock Action
FDA59N30 onsemi
MOSFET N-CH 300V 59A...
1
RFQ
4,123
In-stock
Get Quote
FQA36P15 onsemi
MOSFET P-CH 150V 36A...
1
RFQ
4,676
In-stock
Get Quote
FDA33N25 onsemi
MOSFET N-CH 250V 33A...
1
RFQ
4,322
In-stock
Get Quote
FQA40N25 onsemi
MOSFET N-CH 250V 40A...
1
RFQ
3,811
In-stock
Get Quote
FDA24N50F onsemi
MOSFET N-CH 500V 24A...
1
RFQ
4,601
In-stock
Get Quote
FDA28N50 onsemi
MOSFET N-CH 500V 28A...
1
RFQ
4,699
In-stock
Get Quote
FQA90N15 onsemi
MOSFET N-CH 150V 90A...
1
RFQ
4,434
In-stock
Get Quote
FCA47N60 onsemi
MOSFET N-CH 600V 47A...
1
RFQ
3,448
In-stock
Get Quote
IXTQ40N50L2 Littelfuse
MOSFET N-CH 500V 40A...
1
RFQ
3,087
In-stock
Get Quote
FCA47N60-F109 onsemi
MOSFET N-CH 600V 47A...
1
RFQ
3,181
In-stock
Get Quote
IXTQ36N50P Littelfuse
MOSFET N-CH 500V 36A...
1
RFQ
2,931
In-stock
Get Quote
FCA76N60N onsemi
MOSFET N-CH 600V 76A...
1
RFQ
3,888
In-stock
Get Quote
FQA6N70 Rochester Electronics
MOSFET N-CH 700V 6.4...
263
RFQ
4,317
In-stock
Get Quote
FQA14N30 Rochester Electronics
MOSFET N-CH 300V 15A...
230
RFQ
4,205
In-stock
Get Quote
TW070J120B,S1Q Toshiba Electronic Devices and Storage Corporation
SICFET N-CH 1200V 36...
1
RFQ
3,834
In-stock
Get Quote
IXTQ36N30P Littelfuse
MOSFET N-CH 300V 36A...
1
RFQ
4,126
In-stock
Get Quote
IXTQ26N50P Littelfuse
MOSFET N-CH 500V 26A...
1
RFQ
3,337
In-stock
Get Quote
FQA9N90 Rochester Electronics
N-CHANNEL POWER ...
163
RFQ
3,976
In-stock
Get Quote
IXTQ52N30P Littelfuse
MOSFET N-CH 300V 52A...
1
RFQ
4,066
In-stock
Get Quote
FQA62N25C onsemi
MOSFET N-CH 250V 62A...
1
RFQ
3,013
In-stock
Get Quote
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