Power Dissipation (Max):
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Rds On (Max) @ Id, Vgs:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Vgs (Max):
Image Part Manufacturer Description MOQ Stock Action
2SK3388(TE24L,Q) Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 250V 20A...
1
RFQ
4,468
In-stock
Get Quote
2SK3466(TE24L,Q) Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 500V 5A...
1
RFQ
3,842
In-stock
Get Quote
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