Power Dissipation (Max):
Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Image Part Manufacturer Description MOQ Stock Action
TSM60NB190CI C0G Taiwan Semiconductor
MOSFET N-CH 600V 18A...
1
RFQ
4,957
In-stock
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TSM60NB260CI C0G Taiwan Semiconductor
MOSFET N-CH 600V 13A...
1
RFQ
2,430
In-stock
Get Quote
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