Transistors - FETs, MOSFETs - Single

Part Status：

Power Dissipation (Max)：

Drain to Source Voltage (Vdss)：

Rds On (Max) @ Id, Vgs：

Gate Charge (Qg) (Max) @ Vgs：

Input Capacitance (Ciss) (Max) @ Vds：

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3 Records

Part	Manufacturer	Description	MOQ		Stock	Action
IPB160N08S4-03ATMA1	Rochester Electronics	N-CHANNEL POWER M...	230	PDF RFQ	2,121 In-stock	Get Quote
IPB160N04S3H2ATMA1	Infineon Technologies	MOSFET N-CH 40V 160A...	197	PDF RFQ	3,245 In-stock	Get Quote
IPB160N08S403ATMA1	Infineon Technologies	MOSFET N-CH 80V 160A...	1	PDF RFQ	4,869 In-stock	Get Quote

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