Part Status:
Power Dissipation (Max):
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Image Part Manufacturer Description MOQ Stock Action
TK22E10N1,S1X Toshiba Electronic Devices and Storage Corporation
MOSFET N CH 100V 52A...
1
RFQ
3,886
In-stock
Get Quote
STP26NM60N STMicroelectronics
MOSFET N-CH 600V 20A...
1
RFQ
3,010
In-stock
Get Quote
STP21NM60ND STMicroelectronics
MOSFET N-CH 600V 17A...
1
RFQ
3,312
In-stock
Get Quote
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