S3JHE3_A/I
- Mfr.Part #
- S3JHE3_A/I
- Manufacturer
- Vishay Siliconix
- Package/Case
- -
- Datasheet
- Download
- Description
- DIODE GEN PURP 600V 3A DO214AB
- Manufacturer :
- Vishay Siliconix
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 60pF @ 4V, 1MHz
- Current - Average Rectified (Io) :
- 3A
- Current - Reverse Leakage @ Vr :
- 10 µA @ 600 V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- DO-214AB, SMC
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 2.5 µs
- Speed :
- Standard Recovery >500ns, > 200mA (Io)
- Supplier Device Package :
- DO-214AB (SMC)
- Voltage - DC Reverse (Vr) (Max) :
- 600 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.15 V @ 2.5 A
- Datasheets
- S3JHE3_A/I
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S3JH | Taiwan Semiconductor | 2,265 | DIODE GEN PURP 600V 3A DO214AB |
S3JHE3 | Vishay Siliconix | 2,301 | S3JHE3 VISHAY |
S3JHE3 57T | Vishay Siliconix | 3,129 | - |
S3JHE3 9AT | Vishay Siliconix | 3,715 | - |
S3JHE3-A H | Vishay Siliconix | 3,411 | - |
S3JHE3/57T | Vishay Siliconix | 2,644 | DIODE GEN PURP 600V 3A DO214AB |
S3JHE3/9AT | Vishay Siliconix | 2,244 | DIODE GEN PURP 600V 3A DO214AB |
S3JHE3AH | Vishay Siliconix | 3,670 | - |
S3JHE3_A H | Vishay Siliconix | 4,188 | - |
S3JHE3_A I | Vishay Siliconix | 4,795 | - |
S3JHE3_A/H | Vishay Siliconix | 3,622 | DIODE GEN PURP 600V 3A DO214AB |
S3JHM3_A/H | Vishay Siliconix | 4,031 | 3A 600V SMC STD GPP SM RECT |
S3JHM3_A/I | Vishay Siliconix | 4,406 | 3A 600V SMC STD GPP SM RECT |
S3JHM6G | Taiwan Semiconductor | 3,364 | DIODE GEN PURP 600V 3A DO214AB |
S3JHR7G | Taiwan Semiconductor | 3,537 | DIODE GEN PURP 600V 3A DO214AB |