RN1309,LXHF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 5mA, 5V

Frequency - Transition :

250 MHz

Mounting Type :

Surface Mount

Package / Case :

SC-70, SOT-323

Part Status :

Active

Power - Max :

100 mW

Resistor - Base (R1) :

47 kOhms

Resistor - Emitter Base (R2) :

22 kOhms

Supplier Device Package :

SC-70

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Voltage - Collector Emitter Breakdown (Max) :

50 V