SI4914BDY-T1-GE3
- Mfr.Part #
- SI4914BDY-T1-GE3
- Manufacturer
- Vishay Siliconix
- Package/Case
- -
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V 8.4A 8-SOIC
- Manufacturer :
- Vishay Siliconix
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 8.4A, 8A
- Drain to Source Voltage (Vdss) :
- 30V
- FET Feature :
- Standard
- FET Type :
- 2 N-Channel (Half Bridge)
- Gate Charge (Qg) (Max) @ Vgs :
- 10.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Part Status :
- Obsolete
- Power - Max :
- 2.7W, 3.1W
- Rds On (Max) @ Id, Vgs :
- 21mOhm @ 8A, 10V
- Supplier Device Package :
- 8-SOIC
- Vgs(th) (Max) @ Id :
- 2.7V @ 250µA
- Datasheets
- SI4914BDY-T1-GE3
Manufacturer related products
Catalog related products
Related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
SI4900 | RAMTRON | 3,369 | - |
SI4900DY | Vishay Siliconix | 3,751 | - |
SI4900DY-T1 | Vishay Siliconix | 4,984 | - |
SI4900DY-T1-E3 | Vishay Siliconix | 2,244 | MOSFET 2N-CH 60V 5.3A 8-SOIC |
SI4900DY-T1-E3 MOS | Vishay Siliconix | 4,199 | VISHAY SOP-8 |
SI4900DY-T1-E3-G03 | Vishay Siliconix | 2,979 | - |
SI4900DY-T1-GE3 | Vishay Siliconix | 3,245 | MOSFET 2N-CH 60V 5.3A 8-SOIC |
SI4900DY-TI-E3 | Vishay Siliconix | 3,942 | - |
SI4900DYE3 | N/A | 3,647 | - |
SI4901 | Vishay Siliconix | 2,773 | - |
SI4901-B-GL | Silicon Labs | 3,039 | - |
SI4901-GL | Silicon Labs | 4,879 | - |
SI4902 | Vishay Siliconix | 4,276 | - |
SI4902DY | Vishay Siliconix | 4,810 | SI4902DY VISHAY |
SI4902DY-T1 | Vishay Siliconix | 4,653 | SI4902DY-T1 VISHAY |