IRFR9120

Mfr.Part #
IRFR9120
Manufacturer
Rochester Electronics
Package/Case
-
Datasheet
Download
Description
MOSFET P-CH 100V 5.6A DPAK
Manufacturer :
Rochester Electronics
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
5.6A (Tc)
Drain to Source Voltage (Vdss) :
100 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
P-Channel
Gate Charge (Qg) (Max) @ Vgs :
18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
390 pF @ 25 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Part Status :
Obsolete
Power Dissipation (Max) :
2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs :
600mOhm @ 3.4A, 10V
Supplier Device Package :
D-Pak
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 250µA
Datasheets
IRFR9120

Manufacturer related products

Catalog related products

Related products

Part Manufacturer Stock Description
IRFR U130A IR 4,396 -
IRFR U220A IR 4,533 -
IRFR-120 N/A 3,240 -
IRFR-2607Z IR 3,052 IR SOT252
IRFR010 Vishay Siliconix 2,383 MOSFET N-CH 50V 8.2A DPAK
IRFR010 SiHFR010 Vishay Siliconix 4,476 -
IRFR010 MOS Vishay Siliconix 2,299 VISHAY TO-252
IRFR010-SMD Samtec, Inc. 3,481 -
IRFR010-TF Samsung Semiconductor 4,443 IRFR010-TF SAMSUNG
IRFR010ATF Samsung Electro-Mechanics 3,782 -
IRFR010N IR 3,241 IRFR010N IR
IRFR010PBF Vishay Siliconix 4,902 MOSFET N-CH 50V 8.2A DPAK
IRFR010PBF-BE3 Vishay Siliconix 4,378 MOSFET N-CH 50V 8.2A DPAK
IRFR010T R N/A 4,061 -
IRFR010TF Samsung Electro-Mechanics 4,864 -