- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 310A (Tc)
- Drain to Source Voltage (Vdss) :
- 80 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 304 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 23660 pF @ 40 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- TO-263-7, D²Pak (6 Leads + Tab)
- Part Status :
- Active
- Power Dissipation (Max) :
- 3.8W (Ta), 300W (Tc)
- Rds On (Max) @ Id, Vgs :
- 1.6mOhm @ 36A, 10V
- Supplier Device Package :
- TO-263-7
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheets
- FDB0165N807L
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