IPL65R165CFDAUMA1
- Mfr.Part #
- IPL65R165CFDAUMA1
- Manufacturer
- Infineon Technologies
- Package/Case
- -
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 21.3A 4VSON
- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 21.3A (Tc)
- Drain to Source Voltage (Vdss) :
- 650 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 86 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2340 pF @ 100 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- 4-PowerTSFN
- Part Status :
- Not For New Designs
- Power Dissipation (Max) :
- 195W (Tc)
- Rds On (Max) @ Id, Vgs :
- 165mOhm @ 9.3A, 10V
- Supplier Device Package :
- PG-VSON-4
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4.5V @ 900µA
- Datasheets
- IPL65R165CFDAUMA1
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