Drain to Source Voltage (Vdss):
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Image Part Manufacturer Description MOQ Stock Action
SSM6N55NU,LF Toshiba Electronic Devices and Storage Corporation
MOSFET 2N-CH 30V 4A...
3,000
RFQ
2,530
In-stock
Get Quote
SSM6P47NU,LF Toshiba Electronic Devices and Storage Corporation
MOSFET 2P-CH 20V 4A...
3,000
RFQ
2,970
In-stock
Get Quote
SSM6N57NU,LF Toshiba Electronic Devices and Storage Corporation
MOSFET 2N-CH 30V 4A...
1
RFQ
3,727
In-stock
Get Quote
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