- Power Dissipation (Max):
-
- FET Type:
-
- Current - Continuous Drain (Id) @ 25°C:
-
- Rds On (Max) @ Id, Vgs:
-
- Vgs(th) (Max) @ Id:
-
- Gate Charge (Qg) (Max) @ Vgs:
-
- Input Capacitance (Ciss) (Max) @ Vds:
-
- Drive Voltage (Max Rds On, Min Rds On):
-
- Vgs (Max):
-
8 Records
Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
---|---|---|---|---|---|---|---|
Toshiba Electronic Devices and Storage Corporation | SMOS NCH I: 0.4A, V:... |
1 |
3,211
In-stock
|
Get Quote | |||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 30V 100M... |
1 |
4,718
In-stock
|
Get Quote | |||
Toshiba Electronic Devices and Storage Corporation | MOSFET P-CH 30V 100M... |
1 |
3,351
In-stock
|
Get Quote | |||
Toshiba Electronic Devices and Storage Corporation | MOSFET P-CH 20V 2A ... |
1 |
4,664
In-stock
|
Get Quote | |||
Toshiba Electronic Devices and Storage Corporation | AECQ MOSFET PCH -... |
1 |
3,873
In-stock
|
Get Quote | |||
Toshiba Electronic Devices and Storage Corporation | MOSFET P-CH 20V 2A ... |
1 |
2,940
In-stock
|
Get Quote | |||
Toshiba Electronic Devices and Storage Corporation | MOSFET P-CH 30V 2A ... |
1 |
2,554
In-stock
|
Get Quote | |||
Toshiba Electronic Devices and Storage Corporation | SMOS LOW RON VDS:... |
1 |
4,307
In-stock
|
Get Quote |