Transistors - FETs, MOSFETs - Single

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Power Dissipation (Max)：

Drain to Source Voltage (Vdss)：

Rds On (Max) @ Id, Vgs：

Vgs(th) (Max) @ Id：

Gate Charge (Qg) (Max) @ Vgs：

Input Capacitance (Ciss) (Max) @ Vds：

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3 Records

Part	Manufacturer	Description	MOQ		Stock	Action
FQU2N80TU	Rochester Electronics	MOSFET N-CH 800V 1.8...	507	PDF RFQ	3,032 In-stock	Get Quote
SSU2N60BTU	Rochester Electronics	N-CHANNEL POWER ...	1,031	PDF RFQ	4,451 In-stock	Get Quote
FQU2N80TU	onsemi	MOSFET N-CH 800V 1.8...	1	PDF RFQ	3,174 In-stock	Get Quote

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