FET Feature:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Image Part Manufacturer Description MOQ Stock Action
TK6Q60W,S1VQ Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 600V 6.2...
75
RFQ
3,856
In-stock
Get Quote
TK6Q65W,S1Q Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 650V 5.8...
75
RFQ
3,927
In-stock
Get Quote
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