Power Dissipation (Max):
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Vgs (Max):
Image Part Manufacturer Description MOQ Stock Action
TP65H035G4WS Transphorm
GANFET N-CH 650V 46....
1
RFQ
3,218
In-stock
Get Quote
TP90H050WS Transphorm
GANFET N-CH 900V 34A...
1
RFQ
4,761
In-stock
Get Quote
FCH040N65S3-F155 Rochester Electronics
MOSFET N-CH 650V 65A...
1
RFQ
4,802
In-stock
Get Quote
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