Power Dissipation (Max):
FET Feature:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Image Part Manufacturer Description MOQ Stock Action
RJK60S5DPE-00#J3 Rochester Electronics
MOSFET N-CH 600V 20A...
21
RFQ
4,306
In-stock
Get Quote
HAF1002-90STL Rochester Electronics
MOSFET P-CH 60V 15A...
1
RFQ
4,272
In-stock
Get Quote
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