Operating Temperature:
FET Feature:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Drive Voltage (Max Rds On, Min Rds On):
Vgs (Max):
Image Part Manufacturer Description MOQ Stock Action
SSM3J168F,LF Toshiba Electronic Devices and Storage Corporation
MOSFET P-CH 60V 400M...
1
RFQ
3,361
In-stock
Get Quote
3401 Goford Semiconductor
MOSFET P-CH 30V 4.2A...
1
RFQ
3,610
In-stock
Get Quote
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