Power Dissipation (Max):
Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Image Part Manufacturer Description MOQ Stock Action
TSM60NB041PW C1G Taiwan Semiconductor
MOSFET N-CHANNEL...
1
RFQ
3,502
In-stock
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TSM60NB099PW C1G Taiwan Semiconductor
MOSFET N-CHANNEL...
1
RFQ
3,839
In-stock
Get Quote
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