- Manufacturer：
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- onsemi (2)
- Part Status：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Reverse Recovery Time (trr)：
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- Voltage - Collector Emitter Breakdown (Max)：
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- IGBT Type：
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- Vce(on) (Max) @ Vge, Ic：
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- Switching Energy：
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- Gate Charge：
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- Td (on/off) @ 25°C：
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9 Records
| Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
Toshiba Electronic Devices and Storage Corporation | D-IGBT TO-247 VCES=... |
1 |
3,437
In-stock
|
Get Quote | ||
|
|
Rochester Electronics | IGBT, 40A, 1200V, N-CH... |
145 |
3,046
In-stock
|
Get Quote | ||
|
|
ROHM Semiconductor | HIGH-SPEED FAST S... |
1 |
4,563
In-stock
|
Get Quote | ||
|
|
ROHM Semiconductor | HIGH-SPEED FAST S... |
1 |
4,145
In-stock
|
Get Quote | ||
|
|
ROHM Semiconductor | HIGH-SPEED FAST S... |
1 |
3,706
In-stock
|
Get Quote | ||
|
|
onsemi | IGBT TRENCH/FS 130... |
1 |
2,281
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | IGBT 1200V-X TO247 TU... |
450 |
2,693
In-stock
|
Get Quote | ||
|
|
Rochester Electronics | INSULATED GATE B... |
116 |
4,270
In-stock
|
Get Quote | ||
|
|
onsemi | IGBT 1200V 40A 348W TO... |
1 |
3,677
In-stock
|
Get Quote |