MBR60035CTRL

Mfr.Part #
MBR60035CTRL
Manufacturer
GeneSiC Semiconductor
Package/Case
-
Datasheet
Download
Description
DIODE SCHOTTKY 35V 300A 2 TOWER
Manufacturer :
GeneSiC Semiconductor
Product Category :
Diodes - Rectifiers - Arrays
Current - Average Rectified (Io) (per Diode) :
300A
Current - Reverse Leakage @ Vr :
3 mA @ 35 V
Diode Configuration :
1 Pair Common Anode
Diode Type :
Schottky
Mounting Type :
Chassis Mount
Operating Temperature - Junction :
-55°C ~ 150°C
Package / Case :
Twin Tower
Part Status :
Obsolete
Reverse Recovery Time (trr) :
-
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package :
Twin Tower
Voltage - DC Reverse (Vr) (Max) :
35 V
Voltage - Forward (Vf) (Max) @ If :
600 mV @ 300 A
Datasheets
MBR60035CTRL

Manufacturer related products

Catalog related products

Related products

Part Manufacturer Stock Description
MBR60-B100-FCT-H N/A 4,489 -
MBR600100CT GeneSiC Semiconductor 4,807 DIODE MODULE 100V 300A 2TOWER
MBR600100CTR GeneSiC Semiconductor 2,061 DIODE MODULE 100V 300A 2TOWER
MBR600150CT GeneSiC Semiconductor 2,295 DIODE SCHOTTKY 150V 300A 2 TOWER
MBR600150CTR GeneSiC Semiconductor 2,675 DIODE SCHOTTKY 150V 300A 2 TOWER
MBR600200CT GeneSiC Semiconductor 3,283 DIODE SCHOTTKY 200V 300A 2 TOWER
MBR600200CTR GeneSiC Semiconductor 4,586 DIODE SCHOTTKY 200V 300A 2 TOWER
MBR60020CT GeneSiC Semiconductor 2,275 DIODE MODULE 20V 300A 2TOWER
MBR60020CTL GeneSiC Semiconductor 2,159 DIODE SCHOTTKY 20V 300A 2 TOWER
MBR60020CTR GeneSiC Semiconductor 3,554 DIODE MODULE 20V 300A 2TOWER
MBR60020CTRL GeneSiC Semiconductor 3,211 DIODE SCHOTTKY 20V 300A 2 TOWER
MBR60030CT GeneSiC Semiconductor 4,980 DIODE MODULE 30V 300A 2TOWER
MBR60030CTL GeneSiC Semiconductor 2,967 DIODE SCHOTTKY 30V 300A 2 TOWER
MBR60030CTR GeneSiC Semiconductor 2,482 DIODE MODULE 30V 300A 2TOWER
MBR60030CTRL GeneSiC Semiconductor 3,870 DIODE SCHOTTKY 30V 300A 2 TOWER