NTE912

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Arrays

Current - Collector (Ic) (Max) :

50mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 1mA, 3V

Frequency - Transition :

550MHz

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 125°C (TA)

Part Status :

Active

Power - Max :

750mW

Supplier Device Package :

14-PDIP

Transistor Type :

5 NPN

Vce Saturation (Max) @ Ib, Ic :

230mV @ 1mA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

24V