NVMD3P03R2G

Manufacturer :

Rochester Electronics

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

2.34A (Tj)

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Standard

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 24V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Part Status :

Active

Power - Max :

730mW (Ta)

Rds On (Max) @ Id, Vgs :

85mOhm @ 3.05A, 10V

Supplier Device Package :

8-SOIC

Vgs(th) (Max) @ Id :

2.5V @ 250µA