A2G35S200-01SR3

Mfr.Part #
A2G35S200-01SR3
Manufacturer
NXP Semiconductors
Package/Case
-
Datasheet
Download
Description
AIRFAST RF POWER GAN TRANSISTOR
Manufacturer :
NXP Semiconductors
Product Category :
Transistors - FETs, MOSFETs - RF
Current - Test :
291 mA
Current Rating (Amps) :
-
Frequency :
3.4GHz ~ 3.6GHz
Gain :
16.1dB
Noise Figure :
-
Package / Case :
NI-400S-2S
Part Status :
Active
Power - Output :
180W
Supplier Device Package :
NI-400S-2S
Transistor Type :
GaN HEMT
Voltage - Rated :
125 V
Voltage - Test :
48 V
Datasheets
A2G35S200-01SR3

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