SCT3060ALGC11
- Mfr.Part #
- SCT3060ALGC11
- Manufacturer
- ROHM Semiconductor
- Package/Case
- -
- Datasheet
- Download
- Description
- SICFET N-CH 650V 39A TO247N
- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 39A (Tc)
- Drain to Source Voltage (Vdss) :
- 650 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 18V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 58 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 852 pF @ 500 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- 175°C (TJ)
- Package / Case :
- TO-247-3
- Part Status :
- Active
- Power Dissipation (Max) :
- 165W (Tc)
- Rds On (Max) @ Id, Vgs :
- 78mOhm @ 13A, 18V
- Supplier Device Package :
- TO-247N
- Technology :
- SiCFET (Silicon Carbide)
- Vgs (Max) :
- +22V, -4V
- Vgs(th) (Max) @ Id :
- 5.6V @ 6.67mA
- Datasheets
- SCT3060ALGC11
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