G2R1000MT17J
- Mfr.Part #
- G2R1000MT17J
- Manufacturer
- GeneSiC Semiconductor
- Package/Case
- -
- Datasheet
- Download
- Description
- SIC MOSFET N-CH 3A TO263-7
- Manufacturer :
- GeneSiC Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 3A (Tc)
- Drain to Source Voltage (Vdss) :
- 1700 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 20V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- 139 pF @ 1000 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
- Part Status :
- Active
- Power Dissipation (Max) :
- 54W (Tc)
- Rds On (Max) @ Id, Vgs :
- 1.2Ohm @ 2A, 20V
- Supplier Device Package :
- TO-263-7
- Technology :
- SiCFET (Silicon Carbide)
- Vgs (Max) :
- +20V, -10V
- Vgs(th) (Max) @ Id :
- 4V @ 2mA
- Datasheets
- G2R1000MT17J
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