RQ7E110AJTCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

11A (Tc)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

22 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

2410 pF @ 15 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-SMD, Flat Lead

Part Status :

Active

Power Dissipation (Max) :

1.5W (Tc)

Rds On (Max) @ Id, Vgs :

9mOhm @ 4.5A, 11V

Supplier Device Package :

TSMT8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

1.5V @ 10mA