- Manufacturer :
- PANJIT
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 170mA (Ta)
- Drain to Source Voltage (Vdss) :
- 100 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 1.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 45 pF @ 25 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Part Status :
- Active
- Power Dissipation (Max) :
- 500mW (Ta)
- Rds On (Max) @ Id, Vgs :
- 6Ohm @ 170mA, 10V
- Supplier Device Package :
- SOT-23
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250µA
- Datasheets
- BSS123_R1_00001
Manufacturer related products
Catalog related products
Related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
BSS10 | N/A | 3,748 | - |
BSS100 | onsemi | 4,324 | MOSFET N-CH 100V 220MA TO92-3 |
BSS101 | Infineon Technologies | 3,987 | BSS101 INFINEON |
BSS103 | PHILIPS | 2,797 | - |
BSS11 | N/A | 4,159 | - |
BSS110 | onsemi | 3,937 | MOSFET P-CH 50V 170MA TO92-3 |
BSS110-E6288 | Siemens | 3,168 | - |
BSS110E-6325 | N/A | 4,547 | - |
BSS110E6325 | N/A | 4,405 | - |
BSS1125-A-TBB 83330 | N/A | 4,521 | - |
BSS119 | Infineon Technologies | 3,966 | - |
BSS119 E6327 | Infineon Technologies | 4,227 | INFINEON SOT-23 |
BSS119 E6433 | Infineon Technologies | 3,342 | MOSFET N-CH 100V 170MA SOT23-3 |
BSS119 E7796 | Infineon Technologies | 2,917 | MOSFET N-CH 100V 170MA SOT23-3 |
BSS119 E7978 | Infineon Technologies | 2,066 | MOSFET N-CH 100V 170MA SOT23-3 |