TQM130NB06CR RLG

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

10A (Ta), 50A (Tc)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

7V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

40 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

2234 pF @ 30 V

Mounting Type :

Surface Mount, Wettable Flank

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

8-PowerTDFN

Part Status :

Active

Power Dissipation (Max) :

3.1W (Ta), 83W (Tc)

Rds On (Max) @ Id, Vgs :

13mOhm @ 10A, 10V

Supplier Device Package :

PDFN56U

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.8V @ 250µA