2SJ652-1E

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

28A (Ta)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

4V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

80 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

4360 pF @ 20 V

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-220-3 Full Pack

Part Status :

Obsolete

Power Dissipation (Max) :

2W (Ta), 30W (Tc)

Rds On (Max) @ Id, Vgs :

38mOhm @ 14A, 10V

Supplier Device Package :

TO-220F-3SG

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

-