CSD25211W1015

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

3.2A (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

4.1 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

570 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-UFBGA, DSBGA

Part Status :

Active

Power Dissipation (Max) :

1W (Ta)

Rds On (Max) @ Id, Vgs :

33mOhm @ 1.5A, 4.5V

Supplier Device Package :

6-DSBGA (1x1.5)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-6V

Vgs(th) (Max) @ Id :

1.1V @ 250µA