SI2308BDS-T1-E3

Manufacturer :

Vishay Siliconix

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2.3A (Tc)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

6.8 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

190 pF @ 30 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Part Status :

Active

Power Dissipation (Max) :

1.09W (Ta), 1.66W (Tc)

Rds On (Max) @ Id, Vgs :

156mOhm @ 1.9A, 10V

Supplier Device Package :

SOT-23-3 (TO-236)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA