SSM3K16CT,L3F

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

100mA (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

1.5V, 4V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

9.3 pF @ 3 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Package / Case :

SC-101, SOT-883

Part Status :

Active

Power Dissipation (Max) :

100mW (Ta)

Rds On (Max) @ Id, Vgs :

3Ohm @ 10mA, 4V

Supplier Device Package :

CST3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±10V

Vgs(th) (Max) @ Id :

1.1V @ 100µA