IMBG120R350M1HXTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4.7A (Tc)

Drain to Source Voltage (Vdss) :

1200 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

Standard

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

5.9 nC @ 18 V

Input Capacitance (Ciss) (Max) @ Vds :

196 pF @ 800 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Part Status :

Active

Power Dissipation (Max) :

65W (Tc)

Rds On (Max) @ Id, Vgs :

468mOhm @ 2A, 18V

Supplier Device Package :

PG-TO263-7-12

Technology :

SiCFET (Silicon Carbide)

Vgs (Max) :

+18V, -15V

Vgs(th) (Max) @ Id :

5.7V @ 1mA