IPN60R2K0PFD7SATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

3A (Tc)

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

3.8 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

134 pF @ 400 V

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

TO-261-3

Part Status :

Active

Power Dissipation (Max) :

6W (Tc)

Rds On (Max) @ Id, Vgs :

2Ohm @ 500mA, 10V

Supplier Device Package :

PG-SOT223-3-1

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4.5V @ 30µA