NTMTSC1D6N10MCTXG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

35A (Ta), 267A (Tc)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

106 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

7630 pF @ 50 V

Mounting Type :

Surface Mount, Wettable Flank

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

8-PowerTDFN

Part Status :

Active

Power Dissipation (Max) :

5.1W (Ta), 291W (Tc)

Rds On (Max) @ Id, Vgs :

1.7mOhm @ 90A, 10V

Supplier Device Package :

8-TDFNW (8.3x8.4)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 650µA