IPTG210N25NM3FDATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

7.7A (Ta), 77A (Tc)

Drain to Source Voltage (Vdss) :

250 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

81 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

7000 pF @ 125 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

8-PowerSMD, Gull Wing

Part Status :

Active

Power Dissipation (Max) :

3.8W (Ta), 375W (Tc)

Rds On (Max) @ Id, Vgs :

21mOhm @ 69A, 10V

Supplier Device Package :

PG-HSOG-8-1

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 267µA