DMN1017UCP3-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

7.5A (Ta)

Drain to Source Voltage (Vdss) :

12 V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 3.3V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

16 nC @ 3.3 V

Input Capacitance (Ciss) (Max) @ Vds :

1503 pF @ 6 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

3-XDFN

Part Status :

Active

Power Dissipation (Max) :

1.47W

Rds On (Max) @ Id, Vgs :

17mOhm @ 5A, 3.3V

Supplier Device Package :

X3-DSN1010-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1V @ 250µA