DMN62D1LFDQ-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

400mA (Ta)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

1.5V, 4V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

0.55 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

36 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

3-XDFN

Part Status :

Active

Power Dissipation (Max) :

500mW

Rds On (Max) @ Id, Vgs :

2Ohm @ 100mA, 4V

Supplier Device Package :

U-DFN1212-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

1V @ 250µA