SCTWA90N65G2V-4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

119A (Tc)

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

157 nC @ 18 V

Input Capacitance (Ciss) (Max) @ Vds :

3380 pF @ 400 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 200°C (TJ)

Package / Case :

TO-247-3

Part Status :

Active

Power Dissipation (Max) :

565W (Tc)

Rds On (Max) @ Id, Vgs :

24mOhm @ 50A, 18V

Supplier Device Package :

HiP247™ Long Leads

Technology :

SiCFET (Silicon Carbide)

Vgs (Max) :

+22V, -10V

Vgs(th) (Max) @ Id :

5V @ 1mA