SIA811DJ-T1-E3

Manufacturer :

Vishay Siliconix

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4.5A (Tc)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 4.5V

FET Feature :

Schottky Diode (Isolated)

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

13 nC @ 8 V

Input Capacitance (Ciss) (Max) @ Vds :

355 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

PowerPAK® SC-70-6 Dual

Part Status :

Obsolete

Power Dissipation (Max) :

1.9W (Ta), 6.5W (Tc)

Rds On (Max) @ Id, Vgs :

94mOhm @ 2.8A, 4.5V

Supplier Device Package :

PowerPAK® SC-70-6 Dual

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1V @ 250µA