UPA2825T1S-E2-AT

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

24A (Tc)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

57 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

2600 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-PowerWDFN

Part Status :

Obsolete

Power Dissipation (Max) :

1.5W (Ta), 16.5W (Tc)

Rds On (Max) @ Id, Vgs :

4.6mOhm @ 24A, 10V

Supplier Device Package :

8-HWSON (3.3x3.3)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

-