IGB03N120H2ATMA1

Mfr.Part #
IGB03N120H2ATMA1
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
Download
Description
IGBT 1200V 9.6A 62.5W TO263-3
Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Current - Collector (Ic) (Max) :
9.6 A
Current - Collector Pulsed (Icm) :
9.9 A
Gate Charge :
22 nC
IGBT Type :
-
Input Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature :
-40°C ~ 150°C (TJ)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Part Status :
Last Time Buy
Power - Max :
62.5 W
Reverse Recovery Time (trr) :
-
Supplier Device Package :
PG-TO263-3-2
Switching Energy :
290µJ
Td (on/off) @ 25°C :
9.2ns/281ns
Test Condition :
800V, 3A, 82Ohm, 15V
Vce(on) (Max) @ Vge, Ic :
2.8V @ 15V, 3A
Voltage - Collector Emitter Breakdown (Max) :
1200 V
Datasheets
IGB03N120H2ATMA1

Manufacturer related products

Catalog related products

Related products

Part Manufacturer Stock Description
IGB01N120 Infineon Technologies 2,117 -
IGB01N120H2 Infineon Technologies 3,028 -
IGB01N120H2ATMA1 Infineon Technologies 4,016 IGBT 1200V 3.2A 28W TO263-3-2
IGB02N120 Infineon Technologies 3,786 -
IGB03N120H2 Infineon Technologies 4,848 -
IGB03N120H2 G03H1202 Infineon Technologies 4,331 INFINEON TO-263
IGB03N120H2ATMA1616 Rochester Electronics 3,087 POWER BIPOLAR TRANSISTOR