Transistors - FETs, MOSFETs - Single

Power Dissipation (Max)：

Current - Continuous Drain (Id) @ 25°C：

Rds On (Max) @ Id, Vgs：

Gate Charge (Qg) (Max) @ Vgs：

Input Capacitance (Ciss) (Max) @ Vds：

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2 Records

Image	Part	Manufacturer	Description	MOQ		Stock	Action
	2SK2916(F)	Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 500V 14A...	1	PDF RFQ	2,637 In-stock	Get Quote
	2SK2917(F)	Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 500V 18A...	1	PDF RFQ	3,020 In-stock	Get Quote

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