- Manufacturer：
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- Operating Temperature：
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- Mounting Type：
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- Package / Case：
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- Supplier Device Package：
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- Power Dissipation (Max)：
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- Drain to Source Voltage (Vdss)：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id, Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Vgs (Max)：
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10 Records
| Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
Toshiba Electronic Devices and Storage Corporation | SICFET N-CH 1200V 36... |
1 |
3,834
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | SICFET N-CH 1.2KV 1... |
1 |
4,156
In-stock
|
Get Quote | ||
|
|
GeneSiC Semiconductor | 3300V 50M TO-247-4 SIC ... |
1 |
2,064
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | SICFET N-CH 1.2KV 4... |
1 |
4,202
In-stock
|
Get Quote | ||
|
|
ROHM Semiconductor | SICFET N-CH 1200V 30... |
1 |
4,201
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | SICFET N-CH 1.2KV 1... |
1 |
3,686
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | SICFET N-CH 1.2KV 2... |
1 |
3,504
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | SICFET N-CH 1.2KV 3... |
1 |
4,609
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | SICFET N-CH 1.2KV 4... |
1 |
3,742
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | SICFET N-CH 1.2KV 5... |
1 |
3,261
In-stock
|
Get Quote |